IPB081N06L3GATMA1 vs BSC028N06NSTATMA1 Perbandingan

Perbandingan bersamaan detil IPB081N06L3GATMA1 dari Infineon dan BSC028N06NSTATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPB081N06L3GATMA1 BSC028N06NSTATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 3 OptiMOS 5
Tipe Transistor N-Channel MOSFET —
Paket PG-TO263-3 (D2PAK) PG-TDSON-8-7 (SuperSO8, 5x6 mm)
Drain-Source Voltage (VDS) 60 V 60 V
Continuous Drain Current (ID) at Tc=25C 50 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current rating] —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) 1.2 V min, 2.1 V typ, 2.6 V max —
On-Resistance RDS(on) at VGS=10V 8.1 mOhm typical —
Maximum Power Dissipation (Pd) at Tc=25C 79 W —
Rentang Suhu Kerja -55 C to +175 C (junction) —
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 3 —
Pin Configuration Gate / Drain / Source (D2PAK standard) —
Technology OptiMOS 3 (low-voltage power MOSFET) MOSFET N-Channel (OptiMOS 5)
Status RoHS Compliant Compliant
Level MSL 1 (unlimited) 1
Part Number Base — BSC028N06NS
Continuous Drain Current (ID) at TA=25C — 24 A
Continuous Drain Current (ID) at TC=25C — 100 A
On-Resistance RDS(on) max at VGS=10V — 2.8 mOhm
Gate Threshold Voltage VGS(th) typ — 2.5 V to 3.5 V
Total Gate Charge Qg — 37 nC @ VGS=10V
Input Capacitance Ciss — 3000 nC [DATA_NEEDED: confirm exact pF from datasheet]
Output Capacitance Coss — 825 pF
Reverse Transfer Capacitance Crss — 56 pF
Power Dissipation (TA) — 3 W
Power Dissipation (TC) — 100 W
Suhu Hubung Kerja — -55C to +175C
Bebas Halogen — Yes
AEC-Q101 Automotive Qualified — [DATA_NEEDED: confirm from datasheet - this is the NS base, automotive grade may differ]

Spek dan Sumber

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