IPB081N06L3GATMA1 vs BSC028N06NSTATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPB081N06L3GATMA1 sa pamamagitan ng Infineon at BSC028N06NSTATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPB081N06L3GATMA1 - 60V 50A OptiMOS 3 N-Channel MOSFET | Infineon
IPB081N06L3GATMA1 ✓ NakahandaInfineon
BSC028N06NSTATMA1 - 60V 2.8mΩ N-Ch OptiMOS 5 MOSFET | Infineon
BSC028N06NSTATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPB081N06L3GATMA1 | BSC028N06NSTATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 3 | OptiMOS 5 |
| Uri ng Transistor | N-Channel MOSFET | — |
| Packhaging | PG-TO263-3 (D2PAK) | PG-TDSON-8-7 (SuperSO8, 5x6 mm) |
| Drain-Source Voltage (VDS) | 60 V | 60 V |
| Continuous Drain Current (ID) at Tc=25C | 50 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current rating] | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | 1.2 V min, 2.1 V typ, 2.6 V max | — |
| On-Resistance RDS(on) at VGS=10V | 8.1 mOhm typical | — |
| Maximum Power Dissipation (Pd) at Tc=25C | 79 W | — |
| Hanay ng Temperature na Operasyon | -55 C to +175 C (junction) | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Bilang ng Pins | 3 | — |
| Pin Configuration | Gate / Drain / Source (D2PAK standard) | — |
| Technology | OptiMOS 3 (low-voltage power MOSFET) | MOSFET N-Channel (OptiMOS 5) |
| Tindminan RoHS | Compliant | Compliant |
| Level ng MSL | 1 (unlimited) | 1 |
| Part Number Base | — | BSC028N06NS |
| Continuous Drain Current (ID) at TA=25C | — | 24 A |
| Continuous Drain Current (ID) at TC=25C | — | 100 A |
| On-Resistance RDS(on) max at VGS=10V | — | 2.8 mOhm |
| Gate Threshold Voltage VGS(th) typ | — | 2.5 V to 3.5 V |
| Total Gate Charge Qg | — | 37 nC @ VGS=10V |
| Input Capacitance Ciss | — | 3000 nC [DATA_NEEDED: confirm exact pF from datasheet] |
| Output Capacitance Coss | — | 825 pF |
| Reverse Transfer Capacitance Crss | — | 56 pF |
| Power Dissipation (TA) | — | 3 W |
| Power Dissipation (TC) | — | 100 W |
| Temperature ng Junction na Operasyon | — | -55C to +175C |
| Wala sa Halogen | — | Yes |
| AEC-Q101 Automotive Qualified | — | [DATA_NEEDED: confirm from datasheet - this is the NS base, automotive grade may differ] |