IPB120N04S402ATMA1 vs IPC70N04S5L4R2ATMA1 Perbandingan

Perbandingan bersamaan detil IPB120N04S402ATMA1 dari Infineon dan IPC70N04S5L4R2ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPB120N04S402ATMA1 IPC70N04S5L4R2ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Product Family OptiMOS-T2 —
FET Type N-Channel, Enhancement Mode N-Channel
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID, TC) 120 A —
Power Dissipation (PD, TC) 158 W —
RDS(on) (typ @ VGS=10 V) 1.8 mΩ —
Paket PG-TO263-3 (D2PAK) PG-TDSON-8-34 (Surface Mount)
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 3 (2 + Tab) —
Rentang Suhu Kerja -55 °C to +175 °C —
Maximum Junction Temperature 175 °C —
Gate Threshold Voltage (VGS(th), typ) [DATA_NEEDED: gate threshold voltage] —
Total Gate Charge (Qg, typ) [DATA_NEEDED: total gate charge] —
Avalanche Energy Rating 100% Avalanche Tested —
Tingkat Sensitivitas Kekeringan (MSL) MSL1 (per JEDEC J-STD-020, up to 260 °C peak reflow) —
Automotive Qualification AEC-Q101 AEC-Q101
RoHS Compliance Green Product (RoHS compliant) —
Technology — MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) — 40 V
Continuous Drain Current (Id) @ Tc=25°C — 70 A
Power Dissipation (Pd) @ Tc=25°C — 50 W
R_DS(on) Max @ Vgs=10V — 4.2 mΩ (typ)
Gate Threshold (Vgs(th)) — Logic Level (4.5 V max Rds On, Min Rds On)
Drive Voltage (Max Rds On, Min Rds On) — 4.5 V
Operating Temperature (Tj) — -55°C to +175°C
Level MSL — MSL1 (up to 260°C peak reflow)
Avalanche Tested — 100% (60 A production test)
Status RoHS — Compliant (Green Product)
Configuration — Single with Built-in Diode
Case Connection — DRAIN

Spek dan Sumber

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