IPB120N04S402ATMA1 vs IPC70N04S5L4R2ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB120N04S402ATMA1 disebabkan oleh Infineon dan IPC70N04S5L4R2ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPB120N04S402ATMA1 IPC70N04S5L4R2ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Product Family OptiMOS-T2 —
FET Type N-Channel, Enhancement Mode N-Channel
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID, TC) 120 A —
Power Dissipation (PD, TC) 158 W —
RDS(on) (typ @ VGS=10 V) 1.8 mΩ —
Kemasan PG-TO263-3 (D2PAK) PG-TDSON-8-34 (Surface Mount)
Jenis Pemasangan Surface Mount Surface Mount
Kiraan Pin 3 (2 + Tab) —
Gambaran Suhu Operasi -55 °C to +175 °C —
Maximum Junction Temperature 175 °C —
Gate Threshold Voltage (VGS(th), typ) [DATA_NEEDED: gate threshold voltage] —
Total Gate Charge (Qg, typ) [DATA_NEEDED: total gate charge] —
Avalanche Energy Rating 100% Avalanche Tested —
Tingkat sensitiviti Air Nama (MSL) MSL1 (per JEDEC J-STD-020, up to 260 °C peak reflow) —
Automotive Qualification AEC-Q101 AEC-Q101
RoHS Compliance Green Product (RoHS compliant) —
Technology — MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) — 40 V
Continuous Drain Current (Id) @ Tc=25°C — 70 A
Power Dissipation (Pd) @ Tc=25°C — 50 W
R_DS(on) Max @ Vgs=10V — 4.2 mΩ (typ)
Gate Threshold (Vgs(th)) — Logic Level (4.5 V max Rds On, Min Rds On)
Drive Voltage (Max Rds On, Min Rds On) — 4.5 V
Operating Temperature (Tj) — -55°C to +175°C
Aras MSL — MSL1 (up to 260°C peak reflow)
Avalanche Tested — 100% (60 A production test)
Status RoHS — Compliant (Green Product)
Configuration — Single with Built-in Diode
Case Connection — DRAIN

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga