IPB120P04P4L03ATMA2 vs IPB180P04P4L02ATMA2 Perbandingan

Perbandingan bersamaan detil IPB120P04P4L03ATMA2 dari Infineon dan IPB180P04P4L02ATMA2 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPB120P04P4L03ATMA2 IPB180P04P4L02ATMA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Transistor Polarity P-Channel —
Drain-Source Voltage (VDS) 40 V 40 V
Continuous Drain Current (ID, Tc=25C) 120 A —
Power Dissipation (PD, Tc=25C) 136 W —
On-Resistance (RDS(on)) 3.1 mΩ (typ, per Infineon summary) —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/range] —
Suhu Hubung Kerja -55C to +175C —
Paket PG-TO263-3-2 (D2PAK) PG-TO263-7-3 (D2PAK-6, 7-pin)
Tipe Mounting Surface Mount Surface Mount
Technology Family OptiMOS-P2 —
Configuration Single P-Channel MOSFET —
Jumlah Pin 3 (Gate, Drain, Source) 7 (6 + tab)
Level MSL [DATA_NEEDED: MSL level] [DATA_NEEDED: MSL rating]
Status RoHS Compliant (per Infineon product page) Compliant (per Infineon product page)
Manufacturer — Infineon Technologies
Series — OptiMOS-P2
Tipe Transistor — P-Channel MOSFET
Continuous Drain Current (ID) at Tc — 180 A
Power Dissipation (PD) at Tc — 150 W
On-State Resistance RDS(on) max — 2.4 mOhm at VGS = -10 V (per Infineon product page)
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) typ/min/max]
Rentang Suhu Kerja — -55 C to +175 C (junction)
Automotive Qualification — AEC-Q101
Tab Connection — Drain

Spek dan Sumber

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