IPB120P04P4L03ATMA2 vs IPD90P04P4L04ATMA2 Perbandingan

Perbandingan bersamaan detil IPB120P04P4L03ATMA2 dari Infineon dan IPD90P04P4L04ATMA2 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPB120P04P4L03ATMA2 IPD90P04P4L04ATMA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Transistor Polarity P-Channel —
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID, Tc=25C) 120 A —
Power Dissipation (PD, Tc=25C) 136 W —
On-Resistance (RDS(on)) 3.1 mΩ (typ, per Infineon summary) —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/range] —
Suhu Hubung Kerja -55C to +175C —
Paket PG-TO263-3-2 (D2PAK) PG-TO252-3-313 (DPAK)
Tipe Mounting Surface Mount Surface Mount
Technology Family OptiMOS-P2 —
Configuration Single P-Channel MOSFET —
Jumlah Pin 3 (Gate, Drain, Source) —
Level MSL [DATA_NEEDED: MSL level] [DATA_NEEDED: MSL rating]
Status RoHS Compliant (per Infineon product page) Compliant
Part Number — IPD90P04P4L04ATMA2
Manufacturer — Infineon Technologies
Family — OptiMOS-P2
Channel Type — P-Channel
Drain-Source Voltage (Vds) — -40 V
Continuous Drain Current (Id) at Tc=25C — -90 A
Power Dissipation (Pd) at Tc=25C — 125 W
On-State Resistance Rds(on) typ at Vgs=-10V — 4.3 mOhm
Gate Threshold Voltage Vgs(th) typ — [DATA_NEEDED: Vgs(th) typical value]
Maximum Junction Temperature — 175 C
Rentang Suhu Kerja — -55 C to +175 C
Jumlah Pin — 3 (2 + Tab)
Automotive Qualification — AEC-Q101 qualified

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