IPB120P04P4L03ATMA2 vs IPD90P04P4L04ATMA2 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB120P04P4L03ATMA2 disebabkan oleh Infineon dan IPD90P04P4L04ATMA2 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPB120P04P4L03ATMA2 IPD90P04P4L04ATMA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Transistor Polarity P-Channel —
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID, Tc=25C) 120 A —
Power Dissipation (PD, Tc=25C) 136 W —
On-Resistance (RDS(on)) 3.1 mΩ (typ, per Infineon summary) —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/range] —
Suhu Hubungan Operasi -55C to +175C —
Kemasan PG-TO263-3-2 (D2PAK) PG-TO252-3-313 (DPAK)
Jenis Pemasangan Surface Mount Surface Mount
Technology Family OptiMOS-P2 —
Configuration Single P-Channel MOSFET —
Kiraan Pin 3 (Gate, Drain, Source) —
Aras MSL [DATA_NEEDED: MSL level] [DATA_NEEDED: MSL rating]
Status RoHS Compliant (per Infineon product page) Compliant
Part Number — IPD90P04P4L04ATMA2
Manufacturer — Infineon Technologies
Family — OptiMOS-P2
Channel Type — P-Channel
Drain-Source Voltage (Vds) — -40 V
Continuous Drain Current (Id) at Tc=25C — -90 A
Power Dissipation (Pd) at Tc=25C — 125 W
On-State Resistance Rds(on) typ at Vgs=-10V — 4.3 mOhm
Gate Threshold Voltage Vgs(th) typ — [DATA_NEEDED: Vgs(th) typical value]
Maximum Junction Temperature — 175 C
Gambaran Suhu Operasi — -55 C to +175 C
Bilangan Pin — 3 (2 + Tab)
Automotive Qualification — AEC-Q101 qualified

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