IPB35N10S3L26ATMA1 vs IPP320N20N3GXKSA1 Perbandingan

Perbandingan bersamaan detil IPB35N10S3L26ATMA1 dari Infineon dan IPP320N20N3GXKSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPB35N10S3L26ATMA1 IPP320N20N3GXKSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS-T OptiMOS 3
Channel Type N-Channel N-Channel
Maximum Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at TC 35 A —
Power Dissipation (PD) at TC 71 W —
Package Type PG-TO263-3 (D2PAK-2) —
Tipe Mounting Surface Mount Through Hole
Jumlah Pin 3 (Gate, Drain, Source) —
Channel Mode Enhancement —
RDS(on) (typical per Infineon product page) 26.3 mΩ —
Typical Gate Charge Qg @ Vgs 80 nC —
Maximum Drain-Source Resistance Rds 1.7 mΩ (per RS Components listing) —
Minimum Operating Temperature -55 C —
Maximum Power Dissipation Pd 81 W (per RS Components listing) —
Status RoHS [DATA_NEEDED: RoHS status] Compliant
AEC-Q101 Qualification [DATA_NEEDED: AEC-Q101 qualification status] —
Technology — N-Channel Trench MOSFET
Drain-Source Voltage (VDS) — 200 V
Continuous Drain Current (ID) at TC=25°C — 34 A
On-State Resistance RDS(on) max at VGS=10V — 32 mΩ
Gate Threshold Voltage VGS(th) typ — 4 V
Total Power Dissipation PD at TC=25°C — 136 W
Paket — TO-220-3 (PG-TO220-3) through-hole
Jumlah Pin — 3 (3 + Tab)
Rentang Suhu Kerja — -55°C to +175°C
Element Configuration — Single
Lead-Free — Yes
Level MSL — Not applicable (through-hole)

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