IPB60R280P7ATMA1 vs IPD80R750P7ATMA1 Perbandingan
Perbandingan bersamaan detil IPB60R280P7ATMA1 dari Infineon dan IPD80R750P7ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPB60R280P7ATMA1 | IPD80R750P7ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | $0,88 | — |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolMOS P7 (600 V) | — |
| Tipe Transistor | N-Channel MOSFET | — |
| Technology | Superjunction (SJ) | CoolMOS (Super-Junction) |
| Drain-Source Voltage (V_DSS) | 600 V | — |
| Continuous Drain Current (I_D, T_C=25°C) | 12 A | — |
| On-Resistance R_DS(on) max (V_GS=10V) | 280 mOhm | — |
| Gate-Source Threshold V_GS(th) typ | 3.5 V | — |
| Power Dissipation P_D (T_C=25°C) | 53 W | — |
| Paket | PG-TO263-3 (D2PAK) | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Jumlah Pin | 3 (2 + Tab) | — |
| Rentang Suhu Kerja | -55 °C to +150 °C (T_j max) | — |
| Configuration | Single N-Channel | — |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Generation | 7th Gen CoolMOS (successor to P6) | — |
| Series | — | CoolMOS P7 |
| Part Number | — | IPD80R750P7ATMA1 |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 800 V |
| Continuous Drain Current (ID) at TC=25C | — | 7 A |
| On-Resistance (RDS(on)) max at VGS=10V | — | 750 mOhm |
| Gate Threshold Voltage (VGS(th)) | — | 3.5 V (typical) |
| Gate Charge (Qg) typ | — | [DATA_NEEDED: Qg value] |
| Power Dissipation (PD) at TC=25C | — | 51 W |
| Paket / Case | — | PG-TO252-3 (DPAK) |
| Suhu Kerja | — | -55C to +150C (TJ) |
| Gate Protection | — | Integrated Zener (ESD protected) |
| Packaging | — | Tape & Reel (ATMA1) |