IPB60R280P7ATMA1 vs IPD80R750P7ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB60R280P7ATMA1 disebabkan oleh Infineon dan IPD80R750P7ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPB60R280P7ATMA1 | IPD80R750P7ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | $0.88 | — |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolMOS P7 (600 V) | — |
| Jenis Transistor | N-Channel MOSFET | — |
| Technology | Superjunction (SJ) | CoolMOS (Super-Junction) |
| Drain-Source Voltage (V_DSS) | 600 V | — |
| Continuous Drain Current (I_D, T_C=25°C) | 12 A | — |
| On-Resistance R_DS(on) max (V_GS=10V) | 280 mOhm | — |
| Gate-Source Threshold V_GS(th) typ | 3.5 V | — |
| Power Dissipation P_D (T_C=25°C) | 53 W | — |
| Kemasan | PG-TO263-3 (D2PAK) | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Kiraan Pin | 3 (2 + Tab) | — |
| Gambaran Suhu Operasi | -55 °C to +150 °C (T_j max) | — |
| Configuration | Single N-Channel | — |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Generation | 7th Gen CoolMOS (successor to P6) | — |
| Series | — | CoolMOS P7 |
| Part Number | — | IPD80R750P7ATMA1 |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 800 V |
| Continuous Drain Current (ID) at TC=25C | — | 7 A |
| On-Resistance (RDS(on)) max at VGS=10V | — | 750 mOhm |
| Gate Threshold Voltage (VGS(th)) | — | 3.5 V (typical) |
| Gate Charge (Qg) typ | — | [DATA_NEEDED: Qg value] |
| Power Dissipation (PD) at TC=25C | — | 51 W |
| Kemasan / Case | — | PG-TO252-3 (DPAK) |
| Suhu Operasi | — | -55C to +150C (TJ) |
| Gate Protection | — | Integrated Zener (ESD protected) |
| Packaging | — | Tape & Reel (ATMA1) |