IPC50N04S5L5R5ATMA1 vs BSC019N06NSATMA1 Perbandingan

Perbandingan bersamaan detil IPC50N04S5L5R5ATMA1 dari Infineon dan BSC019N06NSATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPC50N04S5L5R5ATMA1 BSC019N06NSATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Tipe Transistor N-Channel MOSFET —
Mode Enhancement Mode —
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID, Tc) 50 A —
Maximum Drain Current (silicon-limited, 25 °C) 60 A —
On-Resistance RDS(on) max @ VGS=10 V 5.5 mΩ —
Gate Threshold VGS(th) Logic Level (enhancement at ≤ 4.5 V VGS) —
Power Dissipation (Tc) 42 W —
Thermal Resistance Junction-to-Case RthJC 3.6 K/W —
Rentang Suhu Kerja -55 °C to +175 °C -55C to +150C (junction)
Paket PG-TDSON-8-33 (TDSON EP 8-pin, exposed pad) PG-TDSON-8 FL (SuperSO8 5x6 mm)
Tipe Mounting Surface Mount Surface Mount
AEC-Q101 Qualification Qualified (automotive grade) —
MSL (Moisture Sensitivity Level) MSL1 —
Peak Reflow Temperature 260 °C —
Avalanche Rating 100 % Avalanche Tested —
RoHS / REACH RoHS Compliant (Green Product) —
Manufacturer — Infineon Technologies
Part Number — BSC019N06NSATMA1
Technology / Family — OptiMOS 5 (N-channel trench MOSFET)
Drain-Source Voltage (VDS) Max — 60 V
Continuous Drain Current (ID) at TA=25C — 100 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM pulse rating]
On-State Resistance RDS(on) Max @ VGS=10V — 1.95 mΩ (typ)
Gate-Source Threshold Voltage VGS(th) Typ — 3.3 V
Power Dissipation (PD) at TA=25C — 136 W
Level MSL — 1
Channel Type — N-Channel Enhancement Mode
Status RoHS — Compliant
Lead-Free — Yes
Avalanche Rated — Yes

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