IPC70N04S5L4R2ATMA1 vs IPD90N04S403ATMA1 Perbandingan

Perbandingan bersamaan detil IPC70N04S5L4R2ATMA1 dari Infineon dan IPD90N04S403ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPC70N04S5L4R2ATMA1 IPD90N04S403ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology MOSFET (Metal Oxide) Trench MOSFET (OptiMOS-T2)
Drain to Source Voltage (Vdss) 40 V —
Continuous Drain Current (Id) @ Tc=25°C 70 A —
Power Dissipation (Pd) @ Tc=25°C 50 W —
R_DS(on) Max @ Vgs=10V 4.2 mΩ (typ) —
Gate Threshold (Vgs(th)) Logic Level (4.5 V max Rds On, Min Rds On) —
Drive Voltage (Max Rds On, Min Rds On) 4.5 V —
Paket PG-TDSON-8-34 (Surface Mount) PG-TO252-3-313 (DPAK)
Operating Temperature (Tj) -55°C to +175°C —
Tipe Mounting Surface Mount Surface Mount
Level MSL MSL1 (up to 260°C peak reflow) MSL1 (peak reflow up to 260C)
Automotive Qualification AEC-Q101 —
Avalanche Tested 100% (60 A production test) 100% avalanche-tested
Status RoHS Compliant (Green Product) —
Configuration Single with Built-in Diode —
Case Connection DRAIN —
Manufacturer — Infineon Technologies
Product Family — OptiMOS-T2
Channel Type — N-Channel
Drain-Source Voltage (V_DS) — 40 V
Continuous Drain Current (I_D, Tc) — 90 A
On-State Resistance (R_DS(on)) — 3.2 mOhm typical at V_GS = 10 V
Maximum Power Dissipation (P_D, Tc=25C) — 94 W
Gate Threshold Voltage (V_GS(th)) — [DATA_NEEDED: gate threshold voltage]
Suhu Hubung Kerja — -55C to +175C
AEC-Q101 Qualification — Qualified (automotive grade)
RoHS Compliance — Compliant (Green Package)

Spek dan Sumber

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