IPC70N04S5L4R2ATMA1 vs IPD90N04S403ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPC70N04S5L4R2ATMA1 disebabkan oleh Infineon dan IPD90N04S403ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPC70N04S5L4R2ATMA1 IPD90N04S403ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology MOSFET (Metal Oxide) Trench MOSFET (OptiMOS-T2)
Drain to Source Voltage (Vdss) 40 V —
Continuous Drain Current (Id) @ Tc=25°C 70 A —
Power Dissipation (Pd) @ Tc=25°C 50 W —
R_DS(on) Max @ Vgs=10V 4.2 mΩ (typ) —
Gate Threshold (Vgs(th)) Logic Level (4.5 V max Rds On, Min Rds On) —
Drive Voltage (Max Rds On, Min Rds On) 4.5 V —
Kemasan PG-TDSON-8-34 (Surface Mount) PG-TO252-3-313 (DPAK)
Operating Temperature (Tj) -55°C to +175°C —
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL MSL1 (up to 260°C peak reflow) MSL1 (peak reflow up to 260C)
Automotive Qualification AEC-Q101 —
Avalanche Tested 100% (60 A production test) 100% avalanche-tested
Status RoHS Compliant (Green Product) —
Configuration Single with Built-in Diode —
Case Connection DRAIN —
Manufacturer — Infineon Technologies
Product Family — OptiMOS-T2
Channel Type — N-Channel
Drain-Source Voltage (V_DS) — 40 V
Continuous Drain Current (I_D, Tc) — 90 A
On-State Resistance (R_DS(on)) — 3.2 mOhm typical at V_GS = 10 V
Maximum Power Dissipation (P_D, Tc=25C) — 94 W
Gate Threshold Voltage (V_GS(th)) — [DATA_NEEDED: gate threshold voltage]
Suhu Hubungan Operasi — -55C to +175C
AEC-Q101 Qualification — Qualified (automotive grade)
RoHS Compliance — Compliant (Green Package)

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