IPC70N04S5L4R2ATMA1 vs IPD90N04S403ATMA1 مقایسه
مقایسه دقیق کنار به کنار IPC70N04S5L4R2ATMA1 توسط Infineon و IPD90N04S403ATMA1 توسط Infineon. مشخصات کلیدی، پارامترهای الکتریکی، بسته‌بندی، وضعیت چرخه عمر، قیمت‌گذاری و موجودی را مقایسه کنید تا بهترین قطعه را برای نیازهای طراحی خود تعیین کنید.
مقایسه مشخصات
| پارامتر | IPC70N04S5L4R2ATMA1 | IPD90N04S403ATMA1 |
|---|---|---|
| برند | Infineon | Infineon |
| دسته‌بندی | MOSFETs | MOSFETs |
| وضعیت چرخه عمر | فعال | فعال |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | Trench MOSFET (OptiMOS-T2) |
| Drain to Source Voltage (Vdss) | 40 V | — |
| Continuous Drain Current (Id) @ Tc=25°C | 70 A | — |
| Power Dissipation (Pd) @ Tc=25°C | 50 W | — |
| R_DS(on) Max @ Vgs=10V | 4.2 mΩ (typ) | — |
| Gate Threshold (Vgs(th)) | Logic Level (4.5 V max Rds On, Min Rds On) | — |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5 V | — |
| بسته‌بندی | PG-TDSON-8-34 (Surface Mount) | PG-TO252-3-313 (DPAK) |
| Operating Temperature (Tj) | -55°C to +175°C | — |
| نوع نصب | Surface Mount | Surface Mount |
| سطح MSL | MSL1 (up to 260°C peak reflow) | MSL1 (peak reflow up to 260C) |
| Automotive Qualification | AEC-Q101 | — |
| Avalanche Tested | 100% (60 A production test) | 100% avalanche-tested |
| وضعیت RoHS | Compliant (Green Product) | — |
| Configuration | Single with Built-in Diode | — |
| Case Connection | DRAIN | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS-T2 |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Continuous Drain Current (I_D, Tc) | — | 90 A |
| On-State Resistance (R_DS(on)) | — | 3.2 mOhm typical at V_GS = 10 V |
| Maximum Power Dissipation (P_D, Tc=25C) | — | 94 W |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| دمای اتصال کاری | — | -55C to +175C |
| AEC-Q101 Qualification | — | Qualified (automotive grade) |
| RoHS Compliance | — | Compliant (Green Package) |