IPD052N10NF2SATMA1 vs IPD65R380E6ATMA1 Perbandingan
Perbandingan bersamaan detil IPD052N10NF2SATMA1 dari Infineon dan IPD65R380E6ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPD052N10NF2SATMA1 | IPD65R380E6ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPD052N10NF2SATMA1 | — |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide), OptiMOS 5 100V | Superjunction (CoolMOS™) |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at Ta | 17 A | — |
| Continuous Drain Current (ID) at Tc | 118 A | — |
| Power Dissipation (PD) at Ta | 3 W | — |
| Power Dissipation (PD) at Tc | 150 W | — |
| Drain-Source On-Resistance (RDS(on)) Max | 5.2 mΩ @ VGS=10V, ID=70A | — |
| Gate-Source Threshold Voltage (VGS(th)) Max | 3.8 V @ ID=84µA | — |
| Paket / Case | PG-TO252-3 (DPAK, SC-63) | — |
| Supplier Device Package | PG-TO252-3 | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Kerja | -55 °C to +175 °C (TJ) | — |
| Status RoHS | Compliant | Compliant |
| Number of Channels | 1 | — |
| Series | — | CoolMOS™ E6 |
| Tipe Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (V_DS) | — | 650 V |
| Continuous Drain Current (I_D) at T_C | — | 10.6 A |
| R_DS(on) max at V_GS=10V | — | 380 mΩ |
| R_DS(on) test conditions | — | 3.2 A, 10 V |
| Gate-Source Voltage (V_GS) max | — | ±20 V |
| Gate Threshold Voltage (V_GS(th)) | — | 3.5 V typ |
| Gate Charge (Q_G) | — | 39 nC at 10 V |
| Input Capacitance (C_iss) | — | 710 pF at 100 V |
| Power Dissipation (P_D) at T_C | — | 83 W |
| Rentang Suhu Kerja | — | -55 °C to +150 °C |
| Paket | — | PG-TO252-3 (DPAK), surface mount |
| Level MSL | — | 1 |