IPD052N10NF2SATMA1 vs IPD65R380E6ATMA1 Comparison

Detailed side-by-side comparison of IPD052N10NF2SATMA1 by Infineon and IPD65R380E6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPD052N10NF2SATMA1 IPD052N10NF2SATMA1 - 100V N-Ch MOSFET 5.2mΩ 118A | Infineon

IPD052N10NF2SATMA1 - 100V N-Ch MOSFET 5.2mΩ 118A | Infineon

IPD052N10NF2SATMA1 ✓ Active

Specification Comparison

Parameter IPD052N10NF2SATMA1 IPD65R380E6ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.55 $0.65
Manufacturer Infineon Technologies Infineon Technologies
Part Number IPD052N10NF2SATMA1
FET Type N-Channel
Technology MOSFET (Metal Oxide), OptiMOS 5 100V Superjunction (CoolMOS™)
Drain-Source Voltage (VDS) 100 V
Continuous Drain Current (ID) at Ta 17 A
Continuous Drain Current (ID) at Tc 118 A
Power Dissipation (PD) at Ta 3 W
Power Dissipation (PD) at Tc 150 W
Drain-Source On-Resistance (RDS(on)) Max 5.2 mΩ @ VGS=10V, ID=70A
Gate-Source Threshold Voltage (VGS(th)) Max 3.8 V @ ID=84µA
Package / Case PG-TO252-3 (DPAK, SC-63)
Supplier Device Package PG-TO252-3
Mounting Type Surface Mount Surface Mount
Operating Temperature -55 °C to +175 °C (TJ)
RoHS Status Compliant Compliant
Number of Channels 1
Series CoolMOS™ E6
Transistor Type N-Channel MOSFET
Drain-Source Voltage (V_DS) 650 V
Continuous Drain Current (I_D) at T_C 10.6 A
R_DS(on) max at V_GS=10V 380 mΩ
R_DS(on) test conditions 3.2 A, 10 V
Gate-Source Voltage (V_GS) max ±20 V
Gate Threshold Voltage (V_GS(th)) 3.5 V typ
Gate Charge (Q_G) 39 nC at 10 V
Input Capacitance (C_iss) 710 pF at 100 V
Power Dissipation (P_D) at T_C 83 W
Operating Temperature Range -55 °C to +150 °C
Package PG-TO252-3 (DPAK), surface mount
MSL Level 1

Datasheets & Resources

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