IPD200N15N3GATMA1 vs IPD320N20N3GATMA1 Perbandingan
Perbandingan bersamaan detil IPD200N15N3GATMA1 dari Infineon dan IPD320N20N3GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IPD320N20N3GATMA1 - 200V 34A OptiMOS3 N-Channel MOSFET | Infineon
IPD320N20N3GATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IPD200N15N3GATMA1 | IPD320N20N3GATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Part Number | IPD200N15N3GATMA1 | — |
| Technology | OptiMOS 3 (trench) | OptiMOS 3 |
| Tipe Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 150 V | 200 V |
| Continuous Drain Current (ID, TC=25C) | 50 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) max @ VGS=10V | 20 mOhm | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation (PD, TC=25C) | 150 W | — |
| Suhu Hubung Kerja | -55 C to +175 C | — |
| Paket | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Jumlah Pin | 3 (Gate, Drain, Source) | — |
| Level MSL | 1 | — |
| Status RoHS | Compliant | — |
| Lead-Free | Yes | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID, Tc) | — | 34 A |
| Power Dissipation (PD, Tc) | — | 136 W |
| On-Resistance RDS(on) max | — | 32 mOhm at VGS = 10 V |
| Gate Charge x RDS(on) FOM | — | Excellent (per datasheet) |
| Rentang Suhu Kerja | — | -55 C to +175 C (Tj) |
| Lead Plating | — | Pb-free |
| RoHS Compliance | — | Compliant |
| JEDEC Qualification | — | Qualified for target application |
| Channel Mode | — | Enhancement mode |
| Gate Threshold Level | — | Normal level (per datasheet title) |