IPD30N08S2L21ATMA1 vs BSC076N06NS3GATMA1 Perbandingan

Perbandingan bersamaan detil IPD30N08S2L21ATMA1 dari Infineon dan BSC076N06NS3GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPD30N08S2L21ATMA1 BSC076N06NS3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS —
Tipe Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 75 V 60 V
Continuous Drain Current (ID) at Tc=25C 30 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-State Resistance (RDS(on)) at VGS=10 V 26 milliohm (typ) —
Gate Threshold Voltage (VGS(th)) Logic-level (L series) 2.0 V to 3.5 V
Gate Charge (Qg) typ 56 nC —
Power Dissipation (PD) at Tc=25C 136 W —
Rentang Suhu Kerja -55C to +175C -55C to +150C
Maximum Junction Temperature +175C —
Paket PG-TO252-3-11 (DPAK-2) PG-TDSON-8-5 (SuperSO8 5x6 mm)
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 3 (Drain tab + Gate + Source) —
Automotive Qualification AEC-Q101 qualified —
Status RoHS Compliant —
Level MSL 1 1 (unlimited)
Product Family — OptiMOS 3
Technology — N-Channel Trench MOSFET
Continuous Drain Current (ID) at TC=25C — 50 A
On-Resistance RDS(on) max at VGS=10V — 7.6 mΩ
On-Resistance RDS(on) max at VGS=4.5V — 10.4 mΩ
Gate-Source Voltage (VGS) max — ±20 V
Total Gate Charge (Qg) — [DATA_NEEDED: Qg value]
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 69 W
RoHS Compliance — Compliant
Bebas Halogen — Yes (per Infineon product page)

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