IPD320N20N3GATMA1 vs IAUC100N10S5N040ATMA1 Perbandingan

Perbandingan bersamaan detil IPD320N20N3GATMA1 dari Infineon dan IAUC100N10S5N040ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPD320N20N3GATMA1 IAUC100N10S5N040ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel N-Channel, Enhancement Mode
Technology OptiMOS 3 OptiMOS-5
Drain-Source Voltage (VDS) 200 V 100 V
Continuous Drain Current (ID, Tc) 34 A —
Power Dissipation (PD, Tc) 136 W —
On-Resistance RDS(on) max 32 mOhm at VGS = 10 V —
Gate Charge x RDS(on) FOM Excellent (per datasheet) —
Rentang Suhu Kerja -55 C to +175 C (Tj) -55C to +175C (junction)
Paket PG-TO252-3 (DPAK) PG-TDSON-8-34 (TDSON-8, 5x6 mm) Surface Mount
Tipe Mounting Surface Mount Surface Mount
Lead Plating Pb-free —
RoHS Compliance Compliant —
JEDEC Qualification Qualified for target application —
Channel Mode Enhancement mode —
Gate Threshold Level Normal level (per datasheet title) —
Continuous Drain Current (ID) @ TC=25C — 100 A (package-limited)
Pulsed Drain Current (IDM) — 400 A
RDS(on) max @ VGS=10V — 4 mΩ
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical value]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg value]
Maximum Power Dissipation (PD) — 167 W @ TC=25C
Thermal Resistance, Junction-to-Case (RthJC) — 0.9 K/W
Level MSL — MSL1 (up to 260C peak reflow)
Automotive Qualification — AEC-Q100 qualified
Avalanche Rating — 100% Avalanche tested
AOI Compatibility — Feasible for Automatic Optical Inspection
Status RoHS — Compliant

Spek dan Sumber

IAUC100N10S5N040ATMA1

📄 Lihat Spek

Lihat Selengkapnya →

Buka Semua Produk Buat BOM Ajukan Diskon