IPD320N20N3GATMA1 vs IAUC100N10S5N040ATMA1 比較
詳細並排比較 IPD320N20N3GATMA1 由 Infineon 與 IAUC100N10S5N040ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
IAUC100N10S5N040ATMA1 - 100V 4mΩ 100A OptiMOS-5 N-MOSFET | Infineon
IAUC100N10S5N040ATMA1 ✓ 啟用中規格比較
| 參數 | IPD320N20N3GATMA1 | IAUC100N10S5N040ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel | N-Channel, Enhancement Mode |
| Technology | OptiMOS 3 | OptiMOS-5 |
| Drain-Source Voltage (VDS) | 200 V | 100 V |
| Continuous Drain Current (ID, Tc) | 34 A | — |
| Power Dissipation (PD, Tc) | 136 W | — |
| On-Resistance RDS(on) max | 32 mOhm at VGS = 10 V | — |
| Gate Charge x RDS(on) FOM | Excellent (per datasheet) | — |
| 工作溫度範圍 | -55 C to +175 C (Tj) | -55C to +175C (junction) |
| 封裝 | PG-TO252-3 (DPAK) | PG-TDSON-8-34 (TDSON-8, 5x6 mm) Surface Mount |
| 安裝類型 | Surface Mount | Surface Mount |
| Lead Plating | Pb-free | — |
| RoHS Compliance | Compliant | — |
| JEDEC Qualification | Qualified for target application | — |
| Channel Mode | Enhancement mode | — |
| Gate Threshold Level | Normal level (per datasheet title) | — |
| Continuous Drain Current (ID) @ TC=25C | — | 100 A (package-limited) |
| Pulsed Drain Current (IDM) | — | 400 A |
| RDS(on) max @ VGS=10V | — | 4 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg value] |
| Maximum Power Dissipation (PD) | — | 167 W @ TC=25C |
| Thermal Resistance, Junction-to-Case (RthJC) | — | 0.9 K/W |
| MSL 等級 | — | MSL1 (up to 260C peak reflow) |
| Automotive Qualification | — | AEC-Q100 qualified |
| Avalanche Rating | — | 100% Avalanche tested |
| AOI Compatibility | — | Feasible for Automatic Optical Inspection |
| RoHS 狀態 | — | Compliant |