IPD380P06NMATMA1 vs BSZ180P03NS3EGATMA1 Perbandingan
Perbandingan bersamaan detil IPD380P06NMATMA1 dari Infineon dan BSZ180P03NS3EGATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
BSZ180P03NS3EGATMA1 - 30V P-Channel OptiMOS P3 MOSFET | Infineon
BSZ180P03NS3EGATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IPD380P06NMATMA1 | BSZ180P03NS3EGATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity / Channel Type | P-Channel | — |
| Drain-Source Voltage V(BR)DSS | 60 V | — |
| Arus Alir Berlanjut (TC=25°C) | 35 A | — |
| Power Dissipation (Tc) | 125 W | 40 W |
| Technology | OptiMOS P-channel trench | OptiMOS P3 |
| Paket | PG-TO252-3 (DPAK), surface mount | PG-TSDSON-8 (PQFN 3.3 x 3.3 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | -55 C to +150 C (junction) | -55°C to +150°C (TJ) |
| Gate Drive | Logic-level compatible | — |
| Avalanche Rated | Yes (per manufacturer datasheet) | — |
| Status RoHS | Compliant | Compliant |
| Level MSL | 1 | 1 |
| Target Applications | Reverse-polarity protection, load switch, BMS, high-side switch | — |
| Lead-Free | Yes | Yes |
| Automotive Qualified | Not specified in provided data [DATA_NEEDED: AEC-Q100 grade] | — |
| Tipe Transistor | — | P-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | -30 V |
| Continuous Drain Current (ID) - Ta | — | 9 A |
| Continuous Drain Current (ID) - Tc | — | 39.5 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| On-State Resistance (RDS(on)) max | — | 18 mΩ @ VGS = -10 V |
| Gate-Source Threshold (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Gate Charge (QG) total | — | [DATA_NEEDED: QG total] |
| Power Dissipation (Ta) | — | 2.1 W |