IPD50N04S408ATMA1 vs IPC50N04S55R8ATMA1 Perbandingan
Perbandingan bersamaan detil IPD50N04S408ATMA1 dari Infineon dan IPC50N04S55R8ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPD50N04S408ATMA1 | IPC50N04S55R8ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS-T2 | — |
| Polarity | N-Channel | Enhancement Mode |
| Mode | Enhancement-mode | — |
| Drain-Source Voltage (V DS) | 40 V | — |
| Continuous Drain Current (I D, Tc) | 50 A | — |
| Power Dissipation (P D, Tc) | 46 W | — |
| Paket | PG-TO252-3-313 (DPAK) | PG-TDSON-8-33 (TDSON EP) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | -55 °C to +175 °C | -55 °C to +175 °C |
| Level MSL | MSL1 (260 °C peak reflow) | MSL1 (260 °C peak reflow) |
| Automotive Qualification | AEC-Q101 | AEC-Q101 |
| Avalanche Tested | 100 % Avalanche tested | — |
| Green Package (RoHS) | RoHS compliant | — |
| Gate Threshold Voltage (V GS(th)) | [DATA_NEEDED: V GS(th) typical] | — |
| On-State Resistance (R DS(on)) | [DATA_NEEDED: R DS(on) at V GS = 10 V] | — |
| Total Gate Charge (Q G) | [DATA_NEEDED: Q G typical] | — |
| FET Type | — | N-Channel |
| Technology | — | OptiMOS 5 (trench MOSFET) |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Continuous Drain Current (I_D) at Tc | — | 50 A |
| Power Dissipation (P_D) at Tc | — | 42 W |
| R_DS(on) Max (V_GS=10V) | — | 5.8 mΩ |
| Output Capacitance (C_oss) | — | 305 pF |
| Gate Threshold (V_GS(th)) | — | [DATA_NEEDED: V_GS(th)] |
| Avalanche Rating | — | 100% Avalanche Tested |
| RoHS / Green | — | RoHS compliant, Green Product |