IPD50N04S408ATMA1 vs IPC50N04S55R8ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD50N04S408ATMA1 disebabkan oleh Infineon dan IPC50N04S55R8ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPD50N04S408ATMA1 | IPC50N04S55R8ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS-T2 | — |
| Polarity | N-Channel | Enhancement Mode |
| Mode | Enhancement-mode | — |
| Drain-Source Voltage (V DS) | 40 V | — |
| Continuous Drain Current (I D, Tc) | 50 A | — |
| Power Dissipation (P D, Tc) | 46 W | — |
| Kemasan | PG-TO252-3-313 (DPAK) | PG-TDSON-8-33 (TDSON EP) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Gambaran Suhu Operasi | -55 °C to +175 °C | -55 °C to +175 °C |
| Aras MSL | MSL1 (260 °C peak reflow) | MSL1 (260 °C peak reflow) |
| Automotive Qualification | AEC-Q101 | AEC-Q101 |
| Avalanche Tested | 100 % Avalanche tested | — |
| Green Package (RoHS) | RoHS compliant | — |
| Gate Threshold Voltage (V GS(th)) | [DATA_NEEDED: V GS(th) typical] | — |
| On-State Resistance (R DS(on)) | [DATA_NEEDED: R DS(on) at V GS = 10 V] | — |
| Total Gate Charge (Q G) | [DATA_NEEDED: Q G typical] | — |
| FET Type | — | N-Channel |
| Technology | — | OptiMOS 5 (trench MOSFET) |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Continuous Drain Current (I_D) at Tc | — | 50 A |
| Power Dissipation (P_D) at Tc | — | 42 W |
| R_DS(on) Max (V_GS=10V) | — | 5.8 mΩ |
| Output Capacitance (C_oss) | — | 305 pF |
| Gate Threshold (V_GS(th)) | — | [DATA_NEEDED: V_GS(th)] |
| Avalanche Rating | — | 100% Avalanche Tested |
| RoHS / Green | — | RoHS compliant, Green Product |