IPD50N06S409ATMA2 vs IPD028N06NF2SATMA1 Perbandingan

Perbandingan bersamaan detil IPD50N06S409ATMA2 dari Infineon dan IPD028N06NF2SATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPD50N06S409ATMA2 IPD028N06NF2SATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology N-Channel MOSFET (OptiMOS) —
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at Tc 50 A —
On-Resistance R<sub>DS(on)</sub> max at VGS=10V 9 mΩ —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] [DATA_NEEDED: VGS max]
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] —
Power Dissipation (Pd) at Tc 71 W —
Suhu Hubung Kerja -55 °C to +175 °C —
Paket PG-TO252-3-11 (DPAK) PG-TO252-3 (DPAK)
Jumlah Pin 3 (2 + Tab) 3 (Gate, Drain-tab, Source)
Tipe Mounting Surface Mount Surface Mount
Automotive Qualification AEC-Q101 —
Status RoHS Compliant Compliant
Lead-Free / Halogen-Free [DATA_NEEDED] —
Manufacturer — Infineon Technologies
Part Number — IPD028N06NF2SATMA1
Tipe Transistor — N-Channel MOSFET
Technology Family — OptiMOS 5 60V
Drain-Source Voltage (VDS) max — 60 V
Continuous Drain Current (ID) at TA=25°C — 24 A
Continuous Drain Current (ID) at TC=25°C — 139 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) typ @ VGS=10V — 2.85 mΩ
Gate Threshold Voltage (VGS(th)) typ — [DATA_NEEDED: VGS(th) typ]
Power Dissipation at TA=25°C — 3 W
Power Dissipation at TC=25°C — 150 W
Rentang Suhu Hubung Kerja — -55 C to +175 C
Level MSL — 1 (per JEDEC J-STD-020)
Packing — Tape & Reel (T&R)

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon