IPD50N06S409ATMA2 vs IPD028N06NF2SATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPD50N06S409ATMA2 sa pamamagitan ng Infineon at IPD028N06NF2SATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPD50N06S409ATMA2 - 60V 50A 9mΩ OptiMOS N-Ch MOSFET | Infineon
IPD50N06S409ATMA2 ✓ NakahandaInfineon
IPD028N06NF2SATMA1 - 60V 139A 2.85mΩ OptiMOS N-MOSFET | Infineon
IPD028N06NF2SATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPD50N06S409ATMA2 | IPD028N06NF2SATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Technology | N-Channel MOSFET (OptiMOS) | — |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at Tc | 50 A | — |
| On-Resistance R<sub>DS(on)</sub> max at VGS=10V | 9 mΩ | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | [DATA_NEEDED: VGS max] |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | — |
| Power Dissipation (Pd) at Tc | 71 W | — |
| Temperature ng Junction na Operasyon | -55 °C to +175 °C | — |
| Packhaging | PG-TO252-3-11 (DPAK) | PG-TO252-3 (DPAK) |
| Bilang ng Pin | 3 (2 + Tab) | 3 (Gate, Drain-tab, Source) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 | — |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free / Halogen-Free | [DATA_NEEDED] | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IPD028N06NF2SATMA1 |
| Uri ng Transistor | — | N-Channel MOSFET |
| Technology Family | — | OptiMOS 5 60V |
| Drain-Source Voltage (VDS) max | — | 60 V |
| Continuous Drain Current (ID) at TA=25°C | — | 24 A |
| Continuous Drain Current (ID) at TC=25°C | — | 139 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) typ @ VGS=10V | — | 2.85 mΩ |
| Gate Threshold Voltage (VGS(th)) typ | — | [DATA_NEEDED: VGS(th) typ] |
| Power Dissipation at TA=25°C | — | 3 W |
| Power Dissipation at TC=25°C | — | 150 W |
| Hanay ng Temperature ng Junction na Operasyon | — | -55 C to +175 C |
| Level ng MSL | — | 1 (per JEDEC J-STD-020) |
| Packing | — | Tape & Reel (T&R) |