IPD50N06S409ATMA2 vs IPD028N06NF2SATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD50N06S409ATMA2 disebabkan oleh Infineon dan IPD028N06NF2SATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPD50N06S409ATMA2 IPD028N06NF2SATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology N-Channel MOSFET (OptiMOS) —
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at Tc 50 A —
On-Resistance R<sub>DS(on)</sub> max at VGS=10V 9 mΩ —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] [DATA_NEEDED: VGS max]
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] —
Power Dissipation (Pd) at Tc 71 W —
Suhu Hubungan Operasi -55 °C to +175 °C —
Kemasan PG-TO252-3-11 (DPAK) PG-TO252-3 (DPAK)
Kiraan Pin 3 (2 + Tab) 3 (Gate, Drain-tab, Source)
Jenis Pemasangan Surface Mount Surface Mount
Automotive Qualification AEC-Q101 —
Status RoHS Compliant Compliant
Lead-Free / Halogen-Free [DATA_NEEDED] —
Manufacturer — Infineon Technologies
Part Number — IPD028N06NF2SATMA1
Jenis Transistor — N-Channel MOSFET
Technology Family — OptiMOS 5 60V
Drain-Source Voltage (VDS) max — 60 V
Continuous Drain Current (ID) at TA=25°C — 24 A
Continuous Drain Current (ID) at TC=25°C — 139 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) typ @ VGS=10V — 2.85 mΩ
Gate Threshold Voltage (VGS(th)) typ — [DATA_NEEDED: VGS(th) typ]
Power Dissipation at TA=25°C — 3 W
Power Dissipation at TC=25°C — 150 W
Gambaran Suhu Hubungan Operasi — -55 C to +175 C
Aras MSL — 1 (per JEDEC J-STD-020)
Packing — Tape & Reel (T&R)

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