IPD50N10S3L16ATMA1 vs IPD50N06S409ATMA2 Perbandingan
Perbandingan bersamaan detil IPD50N10S3L16ATMA1 dari Infineon dan IPD50N06S409ATMA2 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IPD50N10S3L16ATMA1 - 100V N-Ch 50A OptiMOS MOSFET DPAK | Infineon
IPD50N10S3L16ATMA1 ✓ Aktif
Perbandingan Spesifikasi
| Parameter Umum | IPD50N10S3L16ATMA1 | IPD50N06S409ATMA2 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Part Number | IPD50N10S3L16ATMA1 | — |
| Series | OptiMOS-T | — |
| Tipe Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (V_DS) | 100 V | — |
| Continuous Drain Current (I_D, T_C=25C) | 50 A | — |
| Pulsed Drain Current (I_DM) | 200 A | — |
| R_DS(on) max @ V_GS=10V | 15 mΩ | — |
| Gate Threshold Voltage (V_GS(th)) | 2.5 V (typ) | — |
| Power Dissipation (P_D, T_C=25C) | 100 W | — |
| Paket | PG-TO252-3-11 (DPAK) | PG-TO252-3-11 (DPAK) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | -55C to +175C | — |
| Automotive Qualification | AEC-Q101 | AEC-Q101 |
| Status RoHS | Compliant | Compliant |
| Packaging | Tape & Reel | — |
| Technology | — | N-Channel MOSFET (OptiMOS) |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at Tc | — | 50 A |
| On-Resistance R<sub>DS(on)</sub> max at VGS=10V | — | 9 mΩ |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| Power Dissipation (Pd) at Tc | — | 71 W |
| Suhu Hubung Kerja | — | -55 °C to +175 °C |
| Jumlah Pin | — | 3 (2 + Tab) |
| Lead-Free / Halogen-Free | — | [DATA_NEEDED] |