IPD50P04P413ATMA2 vs IRF4905STRRPBF Perbandingan

Perbandingan bersamaan detil IPD50P04P413ATMA2 dari Infineon dan IRF4905STRRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPD50P04P413ATMA2 IRF4905STRRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity / Device Type P-Channel MOSFET —
Technology OptiMOS-P2 (Trench) HEXFET (Advanced Process)
Drain-Source Voltage (VDS) -40 V -55 V
Continuous Drain Current (TC=25°C, ID) 50 A —
Continuous Drain Current (TC=100°C, ID) [DATA_NEEDED: ID @ 100°C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed IDM] [DATA_NEEDED: pulsed drain current]
Power Dissipation (TC=25°C, Ptot) 58 W —
On-State Resistance (RDS(on)) @ VGS=-10V 9.2 mΩ (typ) / 12.6 mΩ (max) —
On-State Resistance (RDS(on)) @ VGS=-4.5V [DATA_NEEDED: RDS(on) @ VGS=-4.5V] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th)] -2.0 V to -4.0 V
Gate-Source Voltage (VGS) max ±20 V ±20 V
Maximum Junction Temperature (TJ,max) 175 °C —
Rentang Suhu Kerja -55 °C to +175 °C —
Paket PG-TO252-3-313 (DPAK) D2PAK (TO-263-3)
Tipe Mounting Surface Mount Surface Mount
Standard Pack Quantity (13" reel) 2500 pcs —
Level MSL 1 —
Automotive Qualification AEC-Q101 qualified —
Status RoHS Compliant Compliant
Polarity — P-Channel
Continuous Drain Current (ID) at TC=25C — -74 A
Continuous Drain Current (ID) at TC=100C — [DATA_NEEDED: ID at TC=100C]
RDS(on) max at VGS=-10V — 20 mOhm
RDS(on) max at VGS=-4.5V — [DATA_NEEDED: RDS(on) at VGS=-4.5V]
Total Gate Charge (Qg) — 120 nC
Power Dissipation (PD) at TC=25C — 170 W
Suhu Hubung Kerja — -55 C to +175 C
Lead-Free — Yes

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