IPD50P04P413ATMA2 vs IRF4905STRRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD50P04P413ATMA2 disebabkan oleh Infineon dan IRF4905STRRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPD50P04P413ATMA2 IRF4905STRRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity / Device Type P-Channel MOSFET —
Technology OptiMOS-P2 (Trench) HEXFET (Advanced Process)
Drain-Source Voltage (VDS) -40 V -55 V
Continuous Drain Current (TC=25°C, ID) 50 A —
Continuous Drain Current (TC=100°C, ID) [DATA_NEEDED: ID @ 100°C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed IDM] [DATA_NEEDED: pulsed drain current]
Power Dissipation (TC=25°C, Ptot) 58 W —
On-State Resistance (RDS(on)) @ VGS=-10V 9.2 mΩ (typ) / 12.6 mΩ (max) —
On-State Resistance (RDS(on)) @ VGS=-4.5V [DATA_NEEDED: RDS(on) @ VGS=-4.5V] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th)] -2.0 V to -4.0 V
Gate-Source Voltage (VGS) max ±20 V ±20 V
Maximum Junction Temperature (TJ,max) 175 °C —
Gambaran Suhu Operasi -55 °C to +175 °C —
Kemasan PG-TO252-3-313 (DPAK) D2PAK (TO-263-3)
Jenis Pemasangan Surface Mount Surface Mount
Standard Pack Quantity (13" reel) 2500 pcs —
Aras MSL 1 —
Automotive Qualification AEC-Q101 qualified —
Status RoHS Compliant Compliant
Polarity — P-Channel
Continuous Drain Current (ID) at TC=25C — -74 A
Continuous Drain Current (ID) at TC=100C — [DATA_NEEDED: ID at TC=100C]
RDS(on) max at VGS=-10V — 20 mOhm
RDS(on) max at VGS=-4.5V — [DATA_NEEDED: RDS(on) at VGS=-4.5V]
Total Gate Charge (Qg) — 120 nC
Power Dissipation (PD) at TC=25C — 170 W
Suhu Hubungan Operasi — -55 C to +175 C
Lead-Free — Yes

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