IPD50R380CEAUMA1 vs IPB60R165CPATMA1 Perbandingan

Perbandingan bersamaan detil IPD50R380CEAUMA1 dari Infineon dan IPB60R165CPATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPD50R380CEAUMA1 IPB60R165CPATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Drain-Source Voltage (V(BR)DSS) 500 V —
Continuous Drain Current (Id) at Tc=25C 14.1 A —
Continuous Drain Current (Id) at Tc=100C [DATA_NEEDED: Id at Tc=100C] —
Pulsed Drain Current (Idm) [DATA_NEEDED: Idm] —
On-State Resistance (RDS(on)) max at VGS=10V 380 mΩ —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/min/max] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typ] —
Total Power Dissipation (Ptot) at Tc=25C 98 W —
Suhu Hubung Kerja -55C to +150C —
Technology CoolMOS CE (super-junction) CoolMOS CP (superjunction, N-Channel)
Channel Type N-Channel —
Paket PG-TO252-3 (DPAK) PG-TO263-3-2 (D2PAK-2)
Tipe Mounting Surface Mount Surface Mount
Status RoHS Compliant Compliant (Pb-free lead plating)
AEC-Q101 Automotive Not qualified (CE variant; use CE-A for automotive) —
MSL (Moisture Sensitivity Level) [DATA_NEEDED: MSL level] —
Drain-Source Voltage (VDS) — 600 V
Continuous Drain Current (ID, Tc=25°C) — 21 A
Power Dissipation (PD, Tc=25°C) — 192 W
On-Resistance RDS(on), max (VGS=10V) — 165 mΩ
Gate-Source Voltage (VGS) — ±20 V
Gate Threshold Voltage (VGS(th), typ) — 3.5 V
Total Gate Charge (Qg, typ) — [DATA_NEEDED: Qg typical value]
Operating Temperature Range (TJ) — -55°C to +150°C
JEDEC Qualification — Qualified per JEDEC for target applications
dv/dt Ruggedness — Extreme dv/dt rated
Polarity / Channel — N-Channel

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon