IPD50R380CEAUMA1 vs IPB60R165CPATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPD50R380CEAUMA1 sa pamamagitan ng Infineon at IPB60R165CPATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPD50R380CEAUMA1 - 500V CoolMOS CE 380mΩ N-Channel MOSFET | Infineon
IPD50R380CEAUMA1 ✓ NakahandaInfineon
IPB60R165CPATMA1 - 600V 165mΩ CoolMOS CP N-Channel MOSFET | Infineon
IPB60R165CPATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPD50R380CEAUMA1 | IPB60R165CPATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Drain-Source Voltage (V(BR)DSS) | 500 V | — |
| Continuous Drain Current (Id) at Tc=25C | 14.1 A | — |
| Continuous Drain Current (Id) at Tc=100C | [DATA_NEEDED: Id at Tc=100C] | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: Idm] | — |
| On-State Resistance (RDS(on)) max at VGS=10V | 380 mΩ | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ] | — |
| Total Power Dissipation (Ptot) at Tc=25C | 98 W | — |
| Temperature ng Junction na Operasyon | -55C to +150C | — |
| Technology | CoolMOS CE (super-junction) | CoolMOS CP (superjunction, N-Channel) |
| Channel Type | N-Channel | — |
| Packhaging | PG-TO252-3 (DPAK) | PG-TO263-3-2 (D2PAK-2) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Tindminan RoHS | Compliant | Compliant (Pb-free lead plating) |
| AEC-Q101 Automotive | Not qualified (CE variant; use CE-A for automotive) | — |
| MSL (Moisture Sensitivity Level) | [DATA_NEEDED: MSL level] | — |
| Drain-Source Voltage (VDS) | — | 600 V |
| Continuous Drain Current (ID, Tc=25°C) | — | 21 A |
| Power Dissipation (PD, Tc=25°C) | — | 192 W |
| On-Resistance RDS(on), max (VGS=10V) | — | 165 mΩ |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Gate Threshold Voltage (VGS(th), typ) | — | 3.5 V |
| Total Gate Charge (Qg, typ) | — | [DATA_NEEDED: Qg typical value] |
| Operating Temperature Range (TJ) | — | -55°C to +150°C |
| JEDEC Qualification | — | Qualified per JEDEC for target applications |
| dv/dt Ruggedness | — | Extreme dv/dt rated |
| Polarity / Channel | — | N-Channel |