IPD50R380CEAUMA1 vs IPB60R165CPATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD50R380CEAUMA1 disebabkan oleh Infineon dan IPB60R165CPATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPD50R380CEAUMA1 IPB60R165CPATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Drain-Source Voltage (V(BR)DSS) 500 V —
Continuous Drain Current (Id) at Tc=25C 14.1 A —
Continuous Drain Current (Id) at Tc=100C [DATA_NEEDED: Id at Tc=100C] —
Pulsed Drain Current (Idm) [DATA_NEEDED: Idm] —
On-State Resistance (RDS(on)) max at VGS=10V 380 mΩ —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/min/max] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typ] —
Total Power Dissipation (Ptot) at Tc=25C 98 W —
Suhu Hubungan Operasi -55C to +150C —
Technology CoolMOS CE (super-junction) CoolMOS CP (superjunction, N-Channel)
Channel Type N-Channel —
Kemasan PG-TO252-3 (DPAK) PG-TO263-3-2 (D2PAK-2)
Jenis Pemasangan Surface Mount Surface Mount
Status RoHS Compliant Compliant (Pb-free lead plating)
AEC-Q101 Automotive Not qualified (CE variant; use CE-A for automotive) —
MSL (Moisture Sensitivity Level) [DATA_NEEDED: MSL level] —
Drain-Source Voltage (VDS) — 600 V
Continuous Drain Current (ID, Tc=25°C) — 21 A
Power Dissipation (PD, Tc=25°C) — 192 W
On-Resistance RDS(on), max (VGS=10V) — 165 mΩ
Gate-Source Voltage (VGS) — ±20 V
Gate Threshold Voltage (VGS(th), typ) — 3.5 V
Total Gate Charge (Qg, typ) — [DATA_NEEDED: Qg typical value]
Operating Temperature Range (TJ) — -55°C to +150°C
JEDEC Qualification — Qualified per JEDEC for target applications
dv/dt Ruggedness — Extreme dv/dt rated
Polarity / Channel — N-Channel

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