IPD50R380CEAUMA1 vs IPD60R385CPATMA1 Perbandingan

Perbandingan bersamaan detil IPD50R380CEAUMA1 dari Infineon dan IPD60R385CPATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPD50R380CEAUMA1 IPD60R385CPATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Drain-Source Voltage (V(BR)DSS) 500 V 600 V
Continuous Drain Current (Id) at Tc=25C 14.1 A —
Continuous Drain Current (Id) at Tc=100C [DATA_NEEDED: Id at Tc=100C] —
Pulsed Drain Current (Idm) [DATA_NEEDED: Idm] —
On-State Resistance (RDS(on)) max at VGS=10V 380 mΩ —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/min/max] [DATA_NEEDED: VGS(th)]
Total Gate Charge (Qg) [DATA_NEEDED: Qg typ] —
Total Power Dissipation (Ptot) at Tc=25C 98 W —
Suhu Hubung Kerja -55C to +150C -55 °C to +150 °C
Technology CoolMOS CE (super-junction) —
Channel Type N-Channel —
Paket PG-TO252-3 (DPAK) —
Tipe Mounting Surface Mount Surface Mount
Status RoHS Compliant Compliant
AEC-Q101 Automotive Not qualified (CE variant; use CE-A for automotive) —
MSL (Moisture Sensitivity Level) [DATA_NEEDED: MSL level] —
Manufacturer — Infineon Technologies
Series — CoolMOS™ CP (5th generation)
FET Type — N-Channel
Drain-Source On-Resistance (RDS(on)) — 385 mΩ (typ, VGS = 10 V)
Continuous Drain Current (ID) at TC=25°C — 9 A
Pulsed Drain Current (IDM) — 27 A
Power Dissipation (PD) at TC=25°C — 83 W
Gate Charge (Qg) — 18 nC (typ)
Reverse Recovery Charge (Qrr) — [DATA_NEEDED: Qrr]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Paket / Case — PG-TO252-3 (DPAK)
Jumlah Pin — 3 (Gate, Drain, Source; tab = Drain)
Level MSL — 1 (per JEDEC J-STD-020)

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