IPD60R1K0PFD7SAUMA1 vs IPD600N25N3GATMA1 Perbandingan
Perbandingan bersamaan detil IPD60R1K0PFD7SAUMA1 dari Infineon dan IPD600N25N3GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPD60R1K0PFD7SAUMA1 | IPD600N25N3GATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Technology | CoolMOS PFD7 Superjunction (SJ) MOSFET | OptiMOS 3 trench MOSFET |
| Polarity / Channel Type | N-Channel Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 600 V | 250 V |
| Continuous Drain Current (ID) at TC | 4.7 A | — |
| Power Dissipation (PD) at TC | 26 W | — |
| Drain-Source On-Resistance (RDS(on)) | 1 Ω @ VGS=10V | — |
| Gate Threshold Voltage (VGS(th)) | ±20 V (max gate-source) | — |
| Gate Charge (QG) | 6 nC @ VGS=10V | — |
| Output Capacitance (Coss) | 230 pF @ 400 V | — |
| Paket | PG-TO252-3 (DPAK, 2 leads + tab, SC-63) | PG-TO252-3 (DPAK), 3-pin (2+Tab), surface mount |
| Tipe Mounting | Surface Mount | Surface Mount (Tape & Reel) |
| Rentang Suhu Kerja | -55C to +150C (TJ) | — |
| Gate Drive Voltage (recommended) | 10 V (full enhancement) | — |
| Status RoHS | Compliant | — |
| Series | CoolMOS PFD7 consumer / superjunction | — |
| Manufacturer | — | Infineon Technologies |
| Part Series | — | OptiMOS 3 |
| Tipe Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Tc | — | 25 A |
| Power Dissipation (PD) at Tc | — | 136 W |
| On-Resistance RDS(on) max | — | 60 mOhm at VGS = 10 V |
| Tegangan Batas Gerbang | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Suhu Hubung Kerja | — | -55 C to +175 C |
| Lead Plating | — | Pb-free |
| RoHS Compliance | — | Compliant |
| Bebas Halogen | — | Yes, per IEC 61249-2-21 |
| JEDEC Qualification | — | Qualified for target application |