IPD60R1K0PFD7SAUMA1 vs IPD600N25N3GATMA1 比較
詳細並排比較 IPD60R1K0PFD7SAUMA1 由 Infineon 與 IPD600N25N3GATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPD60R1K0PFD7SAUMA1 | IPD600N25N3GATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Technology | CoolMOS PFD7 Superjunction (SJ) MOSFET | OptiMOS 3 trench MOSFET |
| Polarity / Channel Type | N-Channel Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 600 V | 250 V |
| Continuous Drain Current (ID) at TC | 4.7 A | — |
| Power Dissipation (PD) at TC | 26 W | — |
| Drain-Source On-Resistance (RDS(on)) | 1 Ω @ VGS=10V | — |
| Gate Threshold Voltage (VGS(th)) | ±20 V (max gate-source) | — |
| Gate Charge (QG) | 6 nC @ VGS=10V | — |
| Output Capacitance (Coss) | 230 pF @ 400 V | — |
| 封裝 | PG-TO252-3 (DPAK, 2 leads + tab, SC-63) | PG-TO252-3 (DPAK), 3-pin (2+Tab), surface mount |
| 安裝類型 | Surface Mount | Surface Mount (Tape & Reel) |
| 工作溫度範圍 | -55C to +150C (TJ) | — |
| Gate Drive Voltage (recommended) | 10 V (full enhancement) | — |
| RoHS 狀態 | Compliant | — |
| Series | CoolMOS PFD7 consumer / superjunction | — |
| Manufacturer | — | Infineon Technologies |
| Part Series | — | OptiMOS 3 |
| 電晶體類型 | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Tc | — | 25 A |
| Power Dissipation (PD) at Tc | — | 136 W |
| On-Resistance RDS(on) max | — | 60 mOhm at VGS = 10 V |
| 閘極臨界電壓 | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| 工作接面溫度 | — | -55 C to +175 C |
| Lead Plating | — | Pb-free |
| RoHS Compliance | — | Compliant |
| 無鹵素 | — | Yes, per IEC 61249-2-21 |
| JEDEC Qualification | — | Qualified for target application |