IPD60R210PFD7SAUMA1 vs IPD60R600P7ATMA1 Perbandingan

Perbandingan bersamaan detil IPD60R210PFD7SAUMA1 dari Infineon dan IPD60R600P7ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IPD60R600P7ATMA1 IPD60R600P7ATMA1 - 600V 6A CoolMOS P7 MOSFET | Infineon

IPD60R600P7ATMA1 - 600V 6A CoolMOS P7 MOSFET | Infineon

IPD60R600P7ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IPD60R210PFD7SAUMA1 IPD60R600P7ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolMOS PFD7 —
Technology Superjunction (CoolMOS) N-Channel Power MOSFET Superjunction (SJ) / CoolMOS
Drain-Source Voltage (VDS) 600 V 600 V
Continuous Drain Current (ID, Tc) 16 A —
On-Resistance (RDS(on), max) 210 mOhm —
Power Dissipation (Ptot, Tc=25C) 64 W —
Gate Threshold Voltage (VGS(th), typ) 3.5 V —
Gate Charge (Qg, typ) [DATA_NEEDED: Qg value] —
Package Type TO-252 (DPAK) —
Manufacturer Package Designator PG-TO252-3-344 —
Tipe Mounting Surface Mount (SMT) Surface Mount
Pin Configuration 3-Pin (2+Tab) - Gate, Drain (tab), Source —
Rentang Suhu Kerja -55C to +150C (TJ) -55C to +150C (TJ)
Lead-Free / RoHS Yes (compliant) —
Application Segment Consumer-grade SMPS —
Part Number — IPD60R600P7ATMA1
Series — CoolMOS P7
Tipe Transistor — N-Channel MOSFET
Continuous Drain Current (ID, TC) — 6 A
On-Resistance (RDS(on)) — 490 mOhm (max)
Power Dissipation (PD, TC) — 30 W
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typ/min/max]
Paket / Case — PG-TO252-3 (DPAK), surface mount
Level MSL — 1 (per JEDEC J-STD-020)
Status RoHS — Compliant
Generation — CoolMOS 7th generation (P7, successor to P6)
Ordering Code Suffix — ATMA1 = Tape & Reel, 13-inch

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