IPD60R210PFD7SAUMA1 vs IPD60R600P7ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD60R210PFD7SAUMA1 disebabkan oleh Infineon dan IPD60R600P7ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IPD60R600P7ATMA1 IPD60R600P7ATMA1 - 600V 6A CoolMOS P7 MOSFET | Infineon

IPD60R600P7ATMA1 - 600V 6A CoolMOS P7 MOSFET | Infineon

IPD60R600P7ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IPD60R210PFD7SAUMA1 IPD60R600P7ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolMOS PFD7 —
Technology Superjunction (CoolMOS) N-Channel Power MOSFET Superjunction (SJ) / CoolMOS
Drain-Source Voltage (VDS) 600 V 600 V
Continuous Drain Current (ID, Tc) 16 A —
On-Resistance (RDS(on), max) 210 mOhm —
Power Dissipation (Ptot, Tc=25C) 64 W —
Gate Threshold Voltage (VGS(th), typ) 3.5 V —
Gate Charge (Qg, typ) [DATA_NEEDED: Qg value] —
Package Type TO-252 (DPAK) —
Manufacturer Package Designator PG-TO252-3-344 —
Jenis Pemasangan Surface Mount (SMT) Surface Mount
Pin Configuration 3-Pin (2+Tab) - Gate, Drain (tab), Source —
Gambaran Suhu Operasi -55C to +150C (TJ) -55C to +150C (TJ)
Lead-Free / RoHS Yes (compliant) —
Application Segment Consumer-grade SMPS —
Part Number — IPD60R600P7ATMA1
Series — CoolMOS P7
Jenis Transistor — N-Channel MOSFET
Continuous Drain Current (ID, TC) — 6 A
On-Resistance (RDS(on)) — 490 mOhm (max)
Power Dissipation (PD, TC) — 30 W
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typ/min/max]
Kemasan / Case — PG-TO252-3 (DPAK), surface mount
Aras MSL — 1 (per JEDEC J-STD-020)
Status RoHS — Compliant
Generation — CoolMOS 7th generation (P7, successor to P6)
Ordering Code Suffix — ATMA1 = Tape & Reel, 13-inch

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