IPD70N10S312ATMA1 vs IPD70N10S312ATMA2 Perbandingan

Perbandingan bersamaan detil IPD70N10S312ATMA1 dari Infineon dan IPD70N10S312ATMA2 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPD70N10S312ATMA1 IPD70N10S312ATMA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies
Part Number IPD70N10S312ATMA1 IPD70N10S312ATMA2
Product Family OptiMOS-T Power-Transistor —
FET Type N-Channel, Enhancement Mode —
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID, Tc) 70 A 70 A
Pulsed Drain Current (IDM) 180 A —
Power Dissipation (PD, Tc) 125 W —
On-State Resistance (RDS(on)) 11.1 mΩ @ 70 A, 10 V VGS —
Gate-Source Voltage (VGS) ±20 V ±20 V
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th)] [DATA_NEEDED: VGS(th) typical value]
Input Capacitance (Ciss) 4355 pF @ 25 V —
Total Gate Charge (Qg) 65 nC @ 10 V —
Operating Temperature (TJ) -55 °C to +175 °C —
Paket PG-TO252-3-11 (DPAK, 2 Leads + Tab) PG-TO252-3-11 (DPAK)
Tipe Mounting Surface Mount Surface Mount
Level MSL MSL1 (up to 260 °C peak reflow) 1 (unlimited floor life)
Automotive Qualification AEC-Q101 —
Avalanche Tested 100 % (per datasheet) —
RoHS Compliance Green product, RoHS compliant —
Technology — OptiMOS-T Power-MOSFET (N-Channel)
Power Dissipation (Ptot, Tc=25C) — 125 W
On-State Resistance RDS(on) — [DATA_NEEDED: typical RDS(on) at VGS=10V]
Rentang Suhu Kerja — -55C to +175C
Jumlah Pin — 3 (Gate, Drain, Source)
Channel Type — N-Channel Enhancement Mode
Status RoHS — Compliant
Avalanche Rated — Yes

Spek dan Sumber

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