IPD70N10S312ATMA1 vs IPD70N10S312ATMA2 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD70N10S312ATMA1 disebabkan oleh Infineon dan IPD70N10S312ATMA2 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPD70N10S312ATMA1 IPD70N10S312ATMA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies
Part Number IPD70N10S312ATMA1 IPD70N10S312ATMA2
Product Family OptiMOS-T Power-Transistor —
FET Type N-Channel, Enhancement Mode —
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID, Tc) 70 A 70 A
Pulsed Drain Current (IDM) 180 A —
Power Dissipation (PD, Tc) 125 W —
On-State Resistance (RDS(on)) 11.1 mΩ @ 70 A, 10 V VGS —
Gate-Source Voltage (VGS) ±20 V ±20 V
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th)] [DATA_NEEDED: VGS(th) typical value]
Input Capacitance (Ciss) 4355 pF @ 25 V —
Total Gate Charge (Qg) 65 nC @ 10 V —
Operating Temperature (TJ) -55 °C to +175 °C —
Kemasan PG-TO252-3-11 (DPAK, 2 Leads + Tab) PG-TO252-3-11 (DPAK)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL MSL1 (up to 260 °C peak reflow) 1 (unlimited floor life)
Automotive Qualification AEC-Q101 —
Avalanche Tested 100 % (per datasheet) —
RoHS Compliance Green product, RoHS compliant —
Technology — OptiMOS-T Power-MOSFET (N-Channel)
Power Dissipation (Ptot, Tc=25C) — 125 W
On-State Resistance RDS(on) — [DATA_NEEDED: typical RDS(on) at VGS=10V]
Gambaran Suhu Operasi — -55C to +175C
Kiraan Pin — 3 (Gate, Drain, Source)
Channel Type — N-Channel Enhancement Mode
Status RoHS — Compliant
Avalanche Rated — Yes

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