IPD70N10S3L12ATMA1 vs IPD082N10N3GATMA1 Perbandingan

Perbandingan bersamaan detil IPD70N10S3L12ATMA1 dari Infineon dan IPD082N10N3GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IPD70N10S3L12ATMA1 IPD70N10S3L12ATMA1 - 100V 70A OptiMOS-T MOSFET | Infineon

IPD70N10S3L12ATMA1 - 100V 70A OptiMOS-T MOSFET | Infineon

IPD70N10S3L12ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IPD70N10S3L12ATMA1 IPD082N10N3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS-T —
Tipe Transistor N-Channel MOSFET (Enhancement Mode) —
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID, Tc) 70 A —
Pulsed Drain Current (IDM) 180 A [DATA_NEEDED: pulsed drain current]
Power Dissipation (Ptot, Tc) 125 W —
On-State Resistance RDS(on) typ @ VGS=10V 11.5 mΩ —
Rentang Suhu Kerja -55 °C to +175 °C (junction) —
Paket PG-TO252-3-11 (DPAK) —
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 3 (Drain, Gate, Source + tab) 3 (Gate, Drain, Source)
Level MSL MSL1 (per JEDEC J-STD-020, up to 260 °C peak reflow) 1 (per JEDEC J-STD-020)
Automotive Qualification AEC-Q101 qualified —
Avalanche Rating 100 % avalanche tested —
Status RoHS Compliant (Green Product) Compliant
Avalanche Energy (Single Pulse) [DATA_NEEDED: EAS value] —
Part Number — IPD082N10N3GATMA1
Technology — OptiMOS 3 (Trench N-Channel)
Continuous Drain Current (ID) @ Tc=25°C — 80 A
On-Resistance RDS(on) max @ VGS=10 V — 8.2 mΩ
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/max]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typical]
Power Dissipation (PD) @ Tc=25°C — 125 W
Suhu Hubung Kerja — -55°C to +175°C
Paket / Case — PG-TO252-3 (DPAK), surface mount
Automotive Qualified (AEC-Q101) — Not applicable (industrial/consumer grade)
Lead-Free — Yes

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