IPD90N04S403ATMA1 vs IPD78CN10NGATMA1 Perbandingan

Perbandingan bersamaan detil IPD90N04S403ATMA1 dari Infineon dan IPD78CN10NGATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPD90N04S403ATMA1 IPD78CN10NGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS-T2 —
Channel Type N-Channel —
Drain-Source Voltage (V_DS) 40 V —
Continuous Drain Current (I_D, Tc) 90 A —
On-State Resistance (R_DS(on)) 3.2 mOhm typical at V_GS = 10 V —
Maximum Power Dissipation (P_D, Tc=25C) 94 W —
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: gate threshold voltage] —
Paket PG-TO252-3-313 (DPAK) —
Tipe Mounting Surface Mount Surface Mount
Suhu Hubung Kerja -55C to +175C —
Level MSL MSL1 (peak reflow up to 260C) 1 (per JEDEC J-STD-020)
AEC-Q101 Qualification Qualified (automotive grade) —
Avalanche Tested 100% avalanche-tested —
RoHS Compliance Compliant (Green Package) Compliant
Technology Trench MOSFET (OptiMOS-T2) OptiMOS 2 Power-Transistor
Series — OptiMOS 2
Tipe Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) Max — 100 V
Continuous Drain Current (ID) at Tc=25C — 13 A
On-Resistance RDS(on) Max at VGS=10V — 78 mOhm
Gate Threshold Voltage VGS(th) Typ — [DATA_NEEDED: gate threshold voltage]
Total Gate Charge Qg Typ — [DATA_NEEDED: total gate charge]
Power Dissipation (PD) Max at Tc=25C — 31 W
Operating Junction Temperature Max — 175 C
Paket / Case — PG-TO252-3 (DPAK)
Jumlah Pin — 3 (Gate, Drain, Source) + Tab
Lead Plating — Pb-free (Matte Tin)
JEDEC Qualification — Qualified per JEDEC1 for target application

Spek dan Sumber

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