IPD90P04P4L04ATMA2 vs IPB120P04P4L03ATMA2 Perbandingan

Perbandingan bersamaan detil IPD90P04P4L04ATMA2 dari Infineon dan IPB120P04P4L03ATMA2 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPD90P04P4L04ATMA2 IPB120P04P4L03ATMA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Part Number IPD90P04P4L04ATMA2 —
Manufacturer Infineon Technologies —
Family OptiMOS-P2 —
Channel Type P-Channel —
Drain-Source Voltage (Vds) -40 V —
Continuous Drain Current (Id) at Tc=25C -90 A —
Power Dissipation (Pd) at Tc=25C 125 W —
On-State Resistance Rds(on) typ at Vgs=-10V 4.3 mOhm —
Gate Threshold Voltage Vgs(th) typ [DATA_NEEDED: Vgs(th) typical value] —
Maximum Junction Temperature 175 C —
Rentang Suhu Kerja -55 C to +175 C —
Paket PG-TO252-3-313 (DPAK) PG-TO263-3-2 (D2PAK)
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 3 (2 + Tab) —
Automotive Qualification AEC-Q101 qualified —
Status RoHS Compliant Compliant (per Infineon product page)
Level MSL [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL level]
Transistor Polarity — P-Channel
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID, Tc=25C) — 120 A
Power Dissipation (PD, Tc=25C) — 136 W
On-Resistance (RDS(on)) — 3.1 mΩ (typ, per Infineon summary)
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typ/range]
Suhu Hubung Kerja — -55C to +175C
Technology Family — OptiMOS-P2
Configuration — Single P-Channel MOSFET
Jumlah Pin — 3 (Gate, Drain, Source)

Spek dan Sumber

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