IPD90P04P4L04ATMA2 vs IPB120P04P4L03ATMA2 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD90P04P4L04ATMA2 disebabkan oleh Infineon dan IPB120P04P4L03ATMA2 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPD90P04P4L04ATMA2 IPB120P04P4L03ATMA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Part Number IPD90P04P4L04ATMA2 —
Manufacturer Infineon Technologies —
Family OptiMOS-P2 —
Channel Type P-Channel —
Drain-Source Voltage (Vds) -40 V —
Continuous Drain Current (Id) at Tc=25C -90 A —
Power Dissipation (Pd) at Tc=25C 125 W —
On-State Resistance Rds(on) typ at Vgs=-10V 4.3 mOhm —
Gate Threshold Voltage Vgs(th) typ [DATA_NEEDED: Vgs(th) typical value] —
Maximum Junction Temperature 175 C —
Gambaran Suhu Operasi -55 C to +175 C —
Kemasan PG-TO252-3-313 (DPAK) PG-TO263-3-2 (D2PAK)
Jenis Pemasangan Surface Mount Surface Mount
Bilangan Pin 3 (2 + Tab) —
Automotive Qualification AEC-Q101 qualified —
Status RoHS Compliant Compliant (per Infineon product page)
Aras MSL [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL level]
Transistor Polarity — P-Channel
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID, Tc=25C) — 120 A
Power Dissipation (PD, Tc=25C) — 136 W
On-Resistance (RDS(on)) — 3.1 mΩ (typ, per Infineon summary)
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typ/range]
Suhu Hubungan Operasi — -55C to +175C
Technology Family — OptiMOS-P2
Configuration — Single P-Channel MOSFET
Kiraan Pin — 3 (Gate, Drain, Source)

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