IPG16N10S4L61AATMA1 vs IAUC120N04S6N010ATMA1 Perbandingan

Perbandingan bersamaan detil IPG16N10S4L61AATMA1 dari Infineon dan IAUC120N04S6N010ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IAUC120N04S6N010ATMA1 IAUC120N04S6N010ATMA1 - 40V 1mΩ 150A N-Ch OptiMOS 6 | Infineon

IAUC120N04S6N010ATMA1 - 40V 1mΩ 150A N-Ch OptiMOS 6 | Infineon

IAUC120N04S6N010ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IPG16N10S4L61AATMA1 IAUC120N04S6N010ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type Dual N-Channel (Array) N-Channel
Technology Logic-Level, Enhancement Mode OptiMOS 6
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at 25C 16 A —
Power Dissipation (PD) 29 W —
Paket / Case PG-TDSON-8-10 (Wettable Flank) —
Tipe Mounting Surface Mount Surface Mount
Suhu Kerja -55C to +175C (TJ) —
Tingkat Sensitivitas Kekeringan (MSL) MSL1 (unlimited floor life at <30C / 85% RH) —
Peak Reflow Temperature 260 C —
AEC-Q101 Qualification Qualified (automotive grade) —
RoHS Compliance Compliant (Green Product) —
Avalanche Tested 100% (per datasheet) —
AOI Compatible Yes (Wettable Flank) —
FET Feature Logic Level Gate —
Drain-Source Voltage (V(BR)DSS) — 40 V
Continuous Drain Current (Id, Tc) — 150 A
Power Dissipation (Pd, Tc) — 150 W
RDS(on) at VGS=10V (typ) — 1.0 mΩ
RDS(on) at VGS=10V (max per LCSC excerpt) — 1.03 mΩ
Gate-Source Threshold (VGS(th), typ) — 3 V (at 90 µA)
Paket — PG-TDSON-8-34 (5x6 mm leadless)
Automotive Qualification — AEC-Q101
Rentang Suhu Kerja — -55 °C to +175 °C (TJ, per Infineon OptiMOS 6 family)
Level MSL — 1 (per JEDEC J-STD-020, per Infineon TDSON family)
Status RoHS — Compliant
Gate Drive Recommendation — 10 V VGS for full RDS(on) spec
Polarity — Single N-channel

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IAUC120N04S6N010ATMA1

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