IPG16N10S4L61AATMA1 vs IAUC120N04S6N010ATMA1 比較
詳細並排比較 IPG16N10S4L61AATMA1 由 Infineon 與 IAUC120N04S6N010ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
IPG16N10S4L61AATMA1 - Dual 100V 16A Logic-Level MOSFET | Infineon
IPG16N10S4L61AATMA1 ✓ 啟用中規格比較
| 參數 | IPG16N10S4L61AATMA1 | IAUC120N04S6N010ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | Dual N-Channel (Array) | N-Channel |
| Technology | Logic-Level, Enhancement Mode | OptiMOS 6 |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at 25C | 16 A | — |
| Power Dissipation (PD) | 29 W | — |
| 封裝 / 外殼 | PG-TDSON-8-10 (Wettable Flank) | — |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度 | -55C to +175C (TJ) | — |
| 濕度敏感等級 (MSL) | MSL1 (unlimited floor life at <30C / 85% RH) | — |
| Peak Reflow Temperature | 260 C | — |
| AEC-Q101 Qualification | Qualified (automotive grade) | — |
| RoHS Compliance | Compliant (Green Product) | — |
| Avalanche Tested | 100% (per datasheet) | — |
| AOI Compatible | Yes (Wettable Flank) | — |
| FET Feature | Logic Level Gate | — |
| Drain-Source Voltage (V(BR)DSS) | — | 40 V |
| Continuous Drain Current (Id, Tc) | — | 150 A |
| Power Dissipation (Pd, Tc) | — | 150 W |
| RDS(on) at VGS=10V (typ) | — | 1.0 mΩ |
| RDS(on) at VGS=10V (max per LCSC excerpt) | — | 1.03 mΩ |
| Gate-Source Threshold (VGS(th), typ) | — | 3 V (at 90 µA) |
| 封裝 | — | PG-TDSON-8-34 (5x6 mm leadless) |
| Automotive Qualification | — | AEC-Q101 |
| 工作溫度範圍 | — | -55 °C to +175 °C (TJ, per Infineon OptiMOS 6 family) |
| MSL 等級 | — | 1 (per JEDEC J-STD-020, per Infineon TDSON family) |
| RoHS 狀態 | — | Compliant |
| Gate Drive Recommendation | — | 10 V VGS for full RDS(on) spec |
| Polarity | — | Single N-channel |