IPG20N04S4L08AATMA1 vs IPG20N04S4L08ATMA1 Perbandingan

Perbandingan bersamaan detil IPG20N04S4L08AATMA1 dari Infineon dan IPG20N04S4L08ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IPG20N04S4L08AATMA1 IPG20N04S4L08AATMA1 - Dual N-Ch 40V 8.2mΩ MOSFET | Infineon

IPG20N04S4L08AATMA1 - Dual N-Ch 40V 8.2mΩ MOSFET | Infineon

IPG20N04S4L08AATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IPG20N04S4L08AATMA1 IPG20N04S4L08ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type Dual N-Channel 2 N-Channel (Dual)
Technology OptiMOS-T2 (Logic Level) —
Drain-to-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) @ TC=25°C 20 A (per channel) —
On-Resistance R<sub>DS(on)</sub> max @ VGS=10V 8.2 mΩ —
Gate Threshold Voltage V<sub>GS(th)</sub> typ 1.7 V —
Gate Drive (Logic Level) 4.5 V —
Power Dissipation (PD) @ TC=25°C 54 W —
Suhu Hubung Kerja -55°C to +175°C —
Paket PG-TDSON-8-10 (Wettable Flank) —
Tipe Mounting Surface Mount Surface Mount
AEC-Q101 Qualification Yes —
Peak Reflow Temperature 260°C —
Avalanche Rated Yes (100% tested) —
RoHS / REACH Compliant (Green Product) —
AOI Compatible Yes (Wettable Flank) —
Manufacturer — Infineon Technologies
Part Number — IPG20N04S4L08ATMA1
FET Feature — Logic Level Gate
Drain-to-Source Voltage (Vdss) — 40 V
Continuous Drain Current (Id) @ 25°C — 20 A
On-Resistance Rds(on) max @ Vgs=10V, Id=17A — 8.2 mΩ
Power Dissipation (Pd) — 54 W
Suhu Kerja — -55°C to +175°C
Paket / Case — PG-TDSON-8-4 (TDSON-8)
Series — OptiMOS™-T2, Automotive, AEC-Q101
Level MSL — MSL1 (per JEDEC J-STD-020, up to 260°C peak reflow)
Avalanche Tested — 100% Avalanche Tested
RoHS / Green — RoHS Compliant, Green Product
Part Status — Active

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon