IPG20N04S4L08AATMA1 vs IPG20N04S4L08ATMA1 比較

詳細並排比較 IPG20N04S4L08AATMA1 由 Infineon 與 IPG20N04S4L08ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IPG20N04S4L08AATMA1 IPG20N04S4L08AATMA1 - Dual N-Ch 40V 8.2mΩ MOSFET | Infineon

IPG20N04S4L08AATMA1 - Dual N-Ch 40V 8.2mΩ MOSFET | Infineon

IPG20N04S4L08AATMA1 ✓ 啟用中

規格比較

參數 IPG20N04S4L08AATMA1 IPG20N04S4L08ATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type Dual N-Channel 2 N-Channel (Dual)
Technology OptiMOS-T2 (Logic Level) —
Drain-to-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) @ TC=25°C 20 A (per channel) —
On-Resistance R<sub>DS(on)</sub> max @ VGS=10V 8.2 mΩ —
Gate Threshold Voltage V<sub>GS(th)</sub> typ 1.7 V —
Gate Drive (Logic Level) 4.5 V —
Power Dissipation (PD) @ TC=25°C 54 W —
工作接面溫度 -55°C to +175°C —
封裝 PG-TDSON-8-10 (Wettable Flank) —
安裝類型 Surface Mount Surface Mount
AEC-Q101 Qualification Yes —
Peak Reflow Temperature 260°C —
Avalanche Rated Yes (100% tested) —
RoHS / REACH Compliant (Green Product) —
AOI Compatible Yes (Wettable Flank) —
Manufacturer — Infineon Technologies
Part Number — IPG20N04S4L08ATMA1
FET Feature — Logic Level Gate
Drain-to-Source Voltage (Vdss) — 40 V
Continuous Drain Current (Id) @ 25°C — 20 A
On-Resistance Rds(on) max @ Vgs=10V, Id=17A — 8.2 mΩ
Power Dissipation (Pd) — 54 W
工作溫度 — -55°C to +175°C
封裝 / 外殼 — PG-TDSON-8-4 (TDSON-8)
Series — OptiMOS™-T2, Automotive, AEC-Q101
MSL 等級 — MSL1 (per JEDEC J-STD-020, up to 260°C peak reflow)
Avalanche Tested — 100% Avalanche Tested
RoHS / Green — RoHS Compliant, Green Product
Part Status — Active

資料表與資源

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