IPG20N04S4L08AATMA1 vs IPG20N04S4L08ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPG20N04S4L08AATMA1 disebabkan oleh Infineon dan IPG20N04S4L08ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IPG20N04S4L08AATMA1 IPG20N04S4L08AATMA1 - Dual N-Ch 40V 8.2mΩ MOSFET | Infineon

IPG20N04S4L08AATMA1 - Dual N-Ch 40V 8.2mΩ MOSFET | Infineon

IPG20N04S4L08AATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IPG20N04S4L08AATMA1 IPG20N04S4L08ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type Dual N-Channel 2 N-Channel (Dual)
Technology OptiMOS-T2 (Logic Level) —
Drain-to-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) @ TC=25°C 20 A (per channel) —
On-Resistance R<sub>DS(on)</sub> max @ VGS=10V 8.2 mΩ —
Gate Threshold Voltage V<sub>GS(th)</sub> typ 1.7 V —
Gate Drive (Logic Level) 4.5 V —
Power Dissipation (PD) @ TC=25°C 54 W —
Suhu Hubungan Operasi -55°C to +175°C —
Kemasan PG-TDSON-8-10 (Wettable Flank) —
Jenis Pemasangan Surface Mount Surface Mount
AEC-Q101 Qualification Yes —
Peak Reflow Temperature 260°C —
Avalanche Rated Yes (100% tested) —
RoHS / REACH Compliant (Green Product) —
AOI Compatible Yes (Wettable Flank) —
Manufacturer — Infineon Technologies
Part Number — IPG20N04S4L08ATMA1
FET Feature — Logic Level Gate
Drain-to-Source Voltage (Vdss) — 40 V
Continuous Drain Current (Id) @ 25°C — 20 A
On-Resistance Rds(on) max @ Vgs=10V, Id=17A — 8.2 mΩ
Power Dissipation (Pd) — 54 W
Suhu Operasi — -55°C to +175°C
Kemasan / Case — PG-TDSON-8-4 (TDSON-8)
Series — OptiMOS™-T2, Automotive, AEC-Q101
Aras MSL — MSL1 (per JEDEC J-STD-020, up to 260°C peak reflow)
Avalanche Tested — 100% Avalanche Tested
RoHS / Green — RoHS Compliant, Green Product
Part Status — Active

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