IPG20N04S4L08ATMA1 vs IPG20N04S4L08AATMA1 Perbandingan

Perbandingan bersamaan detil IPG20N04S4L08ATMA1 dari Infineon dan IPG20N04S4L08AATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IPG20N04S4L08AATMA1 IPG20N04S4L08AATMA1 - Dual N-Ch 40V 8.2mΩ MOSFET | Infineon

IPG20N04S4L08AATMA1 - Dual N-Ch 40V 8.2mΩ MOSFET | Infineon

IPG20N04S4L08AATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IPG20N04S4L08ATMA1 IPG20N04S4L08AATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number IPG20N04S4L08ATMA1 —
FET Type 2 N-Channel (Dual) Dual N-Channel
FET Feature Logic Level Gate —
Drain-to-Source Voltage (Vdss) 40 V —
Continuous Drain Current (Id) @ 25°C 20 A —
On-Resistance Rds(on) max @ Vgs=10V, Id=17A 8.2 mΩ —
Power Dissipation (Pd) 54 W —
Suhu Kerja -55°C to +175°C —
Paket / Case PG-TDSON-8-4 (TDSON-8) —
Tipe Mounting Surface Mount Surface Mount
Series OptiMOS™-T2, Automotive, AEC-Q101 —
Level MSL MSL1 (per JEDEC J-STD-020, up to 260°C peak reflow) —
Avalanche Tested 100% Avalanche Tested —
RoHS / Green RoHS Compliant, Green Product —
Part Status Active —
Technology — OptiMOS-T2 (Logic Level)
Drain-to-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID) @ TC=25°C — 20 A (per channel)
On-Resistance R<sub>DS(on)</sub> max @ VGS=10V — 8.2 mΩ
Gate Threshold Voltage V<sub>GS(th)</sub> typ — 1.7 V
Gate Drive (Logic Level) — 4.5 V
Power Dissipation (PD) @ TC=25°C — 54 W
Suhu Hubung Kerja — -55°C to +175°C
Paket — PG-TDSON-8-10 (Wettable Flank)
AEC-Q101 Qualification — Yes
Peak Reflow Temperature — 260°C
Avalanche Rated — Yes (100% tested)
RoHS / REACH — Compliant (Green Product)
AOI Compatible — Yes (Wettable Flank)

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