IPG20N04S4L08ATMA1 vs IPG20N04S4L08AATMA1 比較
詳細並排比較 IPG20N04S4L08ATMA1 由 Infineon 與 IPG20N04S4L08AATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
IPG20N04S4L08ATMA1 - Dual N-Ch 40V 20A 8.2mΩ OptiMOS-T2 | Infineon
IPG20N04S4L08ATMA1 ✓ 啟用中規格比較
| 參數 | IPG20N04S4L08ATMA1 | IPG20N04S4L08AATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Part Number | IPG20N04S4L08ATMA1 | — |
| FET Type | 2 N-Channel (Dual) | Dual N-Channel |
| FET Feature | Logic Level Gate | — |
| Drain-to-Source Voltage (Vdss) | 40 V | — |
| Continuous Drain Current (Id) @ 25°C | 20 A | — |
| On-Resistance Rds(on) max @ Vgs=10V, Id=17A | 8.2 mΩ | — |
| Power Dissipation (Pd) | 54 W | — |
| 工作溫度 | -55°C to +175°C | — |
| 封裝 / 外殼 | PG-TDSON-8-4 (TDSON-8) | — |
| 安裝類型 | Surface Mount | Surface Mount |
| Series | OptiMOS™-T2, Automotive, AEC-Q101 | — |
| MSL 等級 | MSL1 (per JEDEC J-STD-020, up to 260°C peak reflow) | — |
| Avalanche Tested | 100% Avalanche Tested | — |
| RoHS / Green | RoHS Compliant, Green Product | — |
| Part Status | Active | — |
| Technology | — | OptiMOS-T2 (Logic Level) |
| Drain-to-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) @ TC=25°C | — | 20 A (per channel) |
| On-Resistance R<sub>DS(on)</sub> max @ VGS=10V | — | 8.2 mΩ |
| Gate Threshold Voltage V<sub>GS(th)</sub> typ | — | 1.7 V |
| Gate Drive (Logic Level) | — | 4.5 V |
| Power Dissipation (PD) @ TC=25°C | — | 54 W |
| 工作接面溫度 | — | -55°C to +175°C |
| 封裝 | — | PG-TDSON-8-10 (Wettable Flank) |
| AEC-Q101 Qualification | — | Yes |
| Peak Reflow Temperature | — | 260°C |
| Avalanche Rated | — | Yes (100% tested) |
| RoHS / REACH | — | Compliant (Green Product) |
| AOI Compatible | — | Yes (Wettable Flank) |